IRF640
Part Number: IRF640
Manufacturer/Brand: INFINEON
Description: MOSFET, N-channel, 200V voltage rating, 18A current rating, 150mOhm Drain-source resistance, TO-220 Package.
Product Category: Transistors, MOSFET
Package/Case: TO-220
Stock Condition: 8,000, Can Ship in 48 Hours
Minimum: 1 Multiple: 1 Price For: Each
| Quantity | Price |
|---|---|
| 1+ | $1.18 |
| 10+ | $1.06 |
| 100+ | $0.826 |
| 500+ | $0.683 |
| 1000+ | $0.538 |
| 2000+ | $0.502 |
About IRF640
The IRF640 is a MOSFET, specifically an N-channel MOSFET, with a voltage rating of 200V and a current rating of 18A. It has a low drain-source resistance of 150mOhm, indicating that it can handle high currents with minimal power loss. The device comes in a TO-220 package, which is a widely used through-hole package.
This MOSFET has a gate threshold voltage of around 2V, which means it can be easily controlled by most microcontrollers or other electronic devices. The high power dissipation capability of 150W (Tc) allows it to handle high power loads without the risk of overheating.
Overall, the IRF640 is a reliable and high-performance N-channel MOSFET, well-suited for various power electronics applications due to its high voltage and current ratings, low power dissipation, and fast switching characteristics.
Features
- N-channel MOSFET: The IRF640 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) that operates in the N-channel mode. This type of MOSFET is commonly used in power electronics applications.
- Voltage rating of 200V: The IRF640 can handle a maximum voltage of 200V, making it suitable for applications that require high voltage capabilities.
- Current rating of 18A: With a maximum current rating of 18A, the IRF640 can handle high current loads effectively.
- Low drain-source resistance: The IRF640 has a low drain-source resistance of 150mOhm. This low resistance allows for efficient power transfer and minimal power loss even when dealing with high currents.
- TO-220 package: The IRF640 is available in a TO-220 package, which is a commonly used through-hole package. This package type ensures ease of installation and compatibility with various circuit boards.
Specifications
| Product Attribute | Attribute Value |
|---|---|
| INFINEON | |
| Product Category | Transistors MOSFET |
| Si | |
| Through Hole | |
| TO-220-3 | |
| N-Channel | |
| 1 Channel | |
| 200 V | |
| 18 A | |
| 150 mOhms | |
| – 20 V, + 20 V | |
| 2 V | |
| 44.7 nC | |
| – 55 C | |
| + 175 C | |
| 150 W | |
| Enhancement | |
| TO-220 | |
| Brand | Infineon Technologies |
| Configuration | Single |
| Fall Time | 5.5 ns |
| Forward Transconductance – Min | 6.8 S |
| Height | 15.65 mm |
| Length | 10 mm |
| Product Type | MOSFET |
| Rise Time | 19 ns |
| Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 23 ns |
| Typical Turn-On Delay Time | 10 ns |
| Width | 4.4 mm |
| Unit Weight | 0.068784 oz |
Applications
- Power electronics: The high voltage and current ratings of the IRF640 make it suitable for various power electronics applications. It can be used in devices such as power supplies, motor drives, and audio amplifiers.
- Switching applications: The fast switching characteristics of the IRF640, combined with its low drain-source resistance, make it useful for switching applications where quick response times and efficient power transfer are required.
- Microcontroller control: With a gate threshold voltage of around 2V, the IRF640 can be easily controlled by most microcontrollers and electronic devices. This makes it ideal for projects that involve microcontroller-based circuitry.
- Overheating prevention: The high power dissipation capability of 150W (Tc) ensures that the IRF640 can handle high power loads without the risk of overheating. This makes it suitable for applications where high power is involved, such as in industrial machinery or high-power lighting systems.
- Shipped from: Shenzhen warehouse
- Shipment way: DHL/Fedex/TNT/UPS/EMS
- Expected Shipping Date: 1 to 3 days
- Our Lead-Time: 5-7 days
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