2N7000
Part Number: 2N7000
Manufacturer/Brand: Onsemi
Description: N-channel MOSFET, 60V voltage, 200mA current, 400mW power dissipation, 1.2 to 5 Ohms, TO92 Package.
Product Category: Transistors, MOSFETs
Package/Case: TO92
Stock Condition: 6,000, Can Ship in 48 Hours
Minimum: 1 Multiple: 1 Price For: Each
Quantity | Price |
---|---|
1+ | $0.52 |
10+ | $0.42 |
100+ | $0.287 |
500+ | $0.215 |
1000+ | $0.161 |
About 2N7000
The 2N7000 is a highly versatile N-channel enhancement mode Field Effect Transistor (FET) that utilizes high cell density, DMOS technology. With its low on-state resistance and reliable switching performance, this FET is designed to meet the demands of various applications. It can handle continuous currents of up to 400mA DC and deliver pulsed currents of up to 2A.
The 2N7000 is particularly suitable for low voltage and low current applications like small servo motor control, power MOSFET gate drivers, and other switching tasks. One of the key advantages of the 2N7000 is its compatibility with digital circuits and devices such as Arduino and Raspberry Pi. This is due to its low gate threshold voltage, which is approximately 2.1V. As a result, it is often referred to as a logic level FET.
Its ability to operate effectively at lower voltages, such as 5V or 3.3V, makes it an excellent choice as a gate driver for larger MOSFETs that require higher gate threshold voltages.
Features
- High Cell Density and DMOS Technology: The 2N7000 leverages high cell density DMOS technology, a prominent feature responsible for minimizing on-state resistance and providing highly reliable, fast switching performance.
- High Current Handling: This N-channel enhancement mode Field Effect Transistor (FET) can comfortably handle continuous currents up to 400mA DC, with the capacity to deliver pulsed currents as high as 2A.
- Low Gate Threshold Voltage: The 2N7000 has a low gate threshold voltage, approximately 2.1V. This attribute makes it compatible with digital circuits and devices which operate at low voltage levels, earning it the name – ‘logic level FET’.
- Operates at Lower Voltages: Despite its high current processing capabilities, the 2N7000 is capable of effective operation at low voltages such as 5V or 3.3V.
Specifications
Product Attribute | Attribute Value |
---|---|
Onsemi | |
Product Category | Transistors MOSFETs |
Si | |
Through Hole | |
TO92 | |
N-Channel | |
1 Channel | |
60 V | |
350 mA | |
5 Ohms | |
– 20 V, + 20 V | |
800 mV | |
– 55 C | |
+ 150 C | |
400 mW | |
Enhancement | |
2N7000 | |
Bulk | |
Brand | Onsemi |
Configuration | Single |
Forward Transconductance – Min | 0.1 S |
Height | 5.33 mm |
Length | 5.2 mm |
Product | MOSFET Small Signal |
Product Type | MOSFET |
Transistor Type | 1 N-Channel |
Type | FET |
Width | 4.19 mm |
Part # Aliases | 2N7000_NL |
Unit Weight | 0.016000 oz |
Applications
- Small Servo Motor Control: The 2N7000 can be effectively utilized for controlling low current, low voltage applications such as small servo motors, where efficient switching and reliable performance is required.
- Power MOSFET Gate Drivers: The 2N7000 performs excellently as a gate driver for larger power MOSFETs that demand higher gate threshold voltages. Its ability to operate at lower voltages (5V or 3.3V) makes it an ideal interface between low-voltage control circuits and these high-threshold MOSFETs.
- Suitable for Digital Devices: With its low gate threshold voltage, the 2N7000 is perfectly compatible with digital devices such as the Arduino and Raspberry Pi. This makes the 2N7000 a versatile FET for a range of digital electronics projects and applications.
- Versatile Switching Applications: Thanks to its fast and reliable switching performance, the 2N7000 can be deployed in a variety of switching tasks where a low on-state resistance is imperative.
Datasheet Download: 2N7000 Datasheet
ECAD Model: PCB Symbol and Footprint
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