An Overview Of GaN Systems GS66508T [Including Buying Guide]

The GaN Systems GS66508T power transistor has revolutionized the field of power electronics with its cutting-edge technology and exceptional performance. Designed to meet the demands of high-power applications, this transistor offers numerous advantages over traditional silicon-based solutions. In this blog post, we will provide an in-depth overview of the GS66508T, highlighting its key features, technical specifications, and benefits.

Introduction of GS66508T

The GS66508T is a cutting-edge GaN-on-silicon power transistor designed for demanding high-power applications. It boasts exceptional GaN properties that enable it to handle high current and voltage breakdown, as well as operate at high switching frequencies.

With GaN Systems’ patented Island Technology cell layout and GaNPX packaging, the transistor achieves high-current die and high yield, along with low inductance and thermal resistance in a compact package. This unique combination allows for highly efficient power switching, with an impressive power conversion efficiency of 98.7% at 1.5 kW.

The transistor’s top-side cooling and thermally-efficient packaging make it an excellent choice for power and motor drive designs, as well as synchronous boost or buck conversion.

Technical Details

• Enhancement mode GaN-on-silicon power transistor
• Designed for high-power applications
• Features GaN properties for high current and high voltage breakdown
• Supports high switching frequencies
• Utilizes GaN Systems’ patented Island Technology cell layout
• Incorporates GaNPX packaging for low inductance and thermal resistance
• Offers top-side cooling with low junction-to-case thermal resistance
• Provides near-chip-scale, thermally-efficient packaging

Specifications

Product Attribute	Attribute Value
Manufacturer	GaN Systems
Product Category	MOSFET
Technology	GaN-on-Si
Mounting Style	SMD/SMT
Package / Case	GaNpx
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Drain-Source Breakdown Voltage	650 V
Continuous Drain Current	30 A
Drain-Source Resistance	63 mOhms
Gate-Source Voltage	– 10 V, + 7 V
Gate-Source Threshold Voltage	1.1 V
Gate Charge	6.1 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Tradename	GaNPX
Series	GS665xx
Packaging	QFN
Brand	GaN Systems
Configuration	Single
Fall Time	5.2 ns
Moisture Sensitive	Yes
Product Type	MOSFET
Rise Time	3.7 ns
Subcategory	MOSFETs
Transistor Type	E-HEMT Power Transistor
Typical Turn-Off Delay Time	8 ns
Typical Turn-On Delay Time	4.1 ns

Datasheet

PCB Symbol and Footprint

Features and Benefits

1. High-performance power transistor suitable for demanding high-power applications
2. Exceptional GaN properties enable high current and high voltage handling
3. High switching frequencies allow for efficient power conversion
4. GaN Systems’ patented Island Technology cell layout ensures high-current die and high yield
5. GaNPX packaging provides low inductance and thermal resistance in a compact package
6. Very high efficiency power switching with a power conversion efficiency of 98.7% at 1.5 kW
7. Versatile application range including power and motor drive designs, synchronous boost or buck conversion
8. Fast switching speeds and ultra-low thermal losses contribute to overall efficiency and reliability

Applications

• Power and motor drive designs
• Synchronous boost or buck conversion
• High-power industrial applications
• Electric vehicle power systems
• Renewable energy systems
• Server and data center power supplies
• High-frequency inverters
• Telecom infrastructure

Comparison with Other Microcontrollers

As the GS66508T is a GaN power transistor and not a microcontroller, a direct comparison with other microcontrollers may not be appropriate. However, when compared to traditional silicon-based power transistors, the GS66508T offers several advantages.

These include higher current and voltage handling capabilities, higher switching frequencies, higher efficiency, lower thermal resistance, and a more compact package. These features make the GS66508T well-suited for demanding high-power applications where traditional silicon transistors may be limited.

Pricing listing of GS66508T

Purchase Guide of GS66508T

To purchase the GS66508T, you can follow these steps:

1. Step 1: Visit GaN Systems’ official website or contact their sales team.
2. Step 2: Inquire about the availability and pricing of the GS66508T.
3. Step 3: Discuss your specific requirements and application needs with the sales team.
4. Step 4: Place an order for the desired quantity of GS66508T.
5. Step 5: Follow the purchasing process outlined by GaN Systems or their authorized distributors.
6. Step 6: Make the payment as per the agreed-upon terms and conditions.
7. Step 7:  Await delivery of the GS66508T to your specified location.

In conclusion, the GaN Systems GS66508T power transistor stands out as a game-changer in the world of power electronics. Whether you are working on industrial applications, renewable energy systems, or electric vehicles, the GS66508T can deliver the efficiency, reliability, and power density you need.