BSS123NH6327
Part Number: BSS123NH6327
Manufacturer/Brand: INFINEON
Description: Signal N-Channel MOSFET, 100V Voltage, 190mA current capacity, 500mW power dissipation rating, SOT23 package.
Product Category: Transistors, MOSFET
Package/Case: SOT23
Stock Condition: 7,500, Can Ship in 48 Hours
Minimum: 1 Multiple: 1 Price For: Each
Quantity | Price |
---|---|
1+ | $0.43 |
10+ | $0.318 |
100+ | $0.181 |
500+ | $0.12 |
1000+ | $0.092 |
About BSS123NH6327
The BSS123NH6327 is a small signal N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications that require efficient power management and control. It operates at a voltage of 100V with a continuous current capacity of 190mA, making it suitable for low-power circuits. The SOT23 package offers easy installation and compact size.
With a power dissipation rating of 500mW, the BSS123NH6327 can handle moderate power levels while maintaining stable operation. This MOSFET is specifically designed for small signal applications, providing precise control and switching of electrical signals. As an N-Channel MOSFET, it allows for current to flow from the drain to the source when a positive voltage is applied to the gate terminal.
Overall, the BSS123NH6327 is a reliable and efficient N-Channel MOSFET in the SOT23 package. Its small signal capabilities, combined with its moderate voltage and current ratings, make it ideal for use in various electronic circuits where precise power management and control are required.
Features
- Small Signal MOSFET: The BSS123NH6327 is specifically designed for small signal applications, providing precise control and switching of electrical signals.
- Low Voltage Rating: It operates at a voltage of 100V, making it suitable for low-power circuits that require efficient power management and control.
- Moderate Current Capacity: With a continuous current capacity of 190mA, this MOSFET can handle moderate power levels while maintaining stable operation.
- SOT23 Package: The SOT23 package offers easy installation and a compact size, making it convenient for space-constrained electronic circuit designs.
Specifications
Product Attribute | Attribute Value |
---|---|
Infineon | |
Product Category | Transistors MOSFET |
Si | |
SMD/SMT | |
SOT-23-3 | |
N-Channel | |
1 Channel | |
100 V | |
190 mA | |
2.4 Ohms | |
– 20 V, + 20 V | |
1.4 V | |
600 pC | |
– 55 C | |
+ 150 C | |
500 mW | |
Enhancement | |
AEC-Q101 | |
BSS123 | |
Reel | |
Cut Tape | |
MouseReel | |
Brand | Infineon Technologies |
Configuration | Single |
Fall Time | 22 ns |
Forward Transconductance – Min | 410 mS |
Height | 1.1 mm |
Length | 2.9 mm |
Product Type | MOSFET |
Rise Time | 3.2 ns |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 7.4 ns |
Typical Turn-On Delay Time | 2.3 ns |
Width | 1.3 mm |
Part # Aliases | BSS123NH6327XT SP000870646 BSS123NH6327XTSA1 |
Unit Weight | 0.000282 oz |
Applications
- Amplifiers: The BSS123NH6327 can be used in audio amplifiers, where it ensures precise signal amplification and control.
- Switching Circuits: Due to its small signal capabilities and precise control features, this MOSFET is suitable for various switching applications such as digital logic gates, signal routing, and multiplexing.
- Battery Management Systems: In low-power applications or portable devices, the BSS123NH6327 can be utilized in battery management systems to efficiently control power flow and manage battery charge/discharge cycles.
- Sensor Interface: This MOSFET is applicable for interfacing with sensors, enabling proper signal conditioning and control in sensor-based systems like temperature sensing, pressure sensing, and motion detection.
- LED Lighting: The BSS123NH6327 can be employed in LED lighting circuits for dimming and controlling LED brightness levels
Datasheet Download: BSS123NH6327 Datasheet
ECAD Model: PCB Symbol and Footprint
- Shipped from: Shenzhen warehouse
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