GS66508T
Part Number: GS66508T
Manufacturer/Brand: GaN Systems
Description: Top-cooled GaN 650V transistor, 30A, GaN E-mode, GaNPX package, power management development tool.
Product Category: Power Management IC Development Tools, MOSFET
Package/Case: QFN
Stock Condition: 800, Can Ship in 48 Hours
Minimum: 1 Multiple: 1 Price For: Each
| Quantity | Price |
|---|---|
| 1+ | $20.58 |
| 10+ | $18.92 |
| 25+ | $18.13 |
| 100+ | $15.98 |
| 250+ | $15.97 |
| 500+ | $14.21 |
About GS66508T
The GS66508T is a high-performance enhancement mode GaN-on-silicon power transistor designed for demanding high-power applications. Its GaN properties allow for high current and high voltage breakdown, as well as high switching frequency.
The transistor features GaN Systems’ patented Island Technology cell layout, which enables high-current die and high yield, and GaNPX packaging, which provides low inductance and low thermal resistance in a small package. This combination of features provides very high efficiency power switching, with a power conversion efficiency of 98.7% at 1.5 kW.
The transistor also features top-side cooling, which offers very low junction-to-case thermal resistance, and near-chip-scale, thermally-efficient GaNPX packaging. This makes it an ideal choice for power and motor drive designs, as well as synchronous boost or buck conversion. The transistor’s fast switching speeds and ultra-low thermal losses, combined with its high efficiency, make it a versatile and reliable choice for a wide range of high-power applications.
Features
- GaN properties: This allows for high current and high voltage breakdown and high switching frequency.
- Patented Island Technology cell layout: This enables high-current die and high yield.
- GaNPX packaging: Provides low inductance and low thermal resistance in a small package.
- High efficiency power switching: Power conversion efficiency of 98.7% at 1.5 kW.
- Top-side cooling: Offers very low junction-to-case thermal resistance.
- Near-chip-scale, thermally-efficient GaNPX packaging: Ideal for power and motor drive designs as well as synchronous boost or buck conversion.
- Fast switching speeds and ultra-low thermal losses: Combine with high efficiency to make the transistor a versatile and reliable choice for a wide range of high-power applications.
Specifications
| Product Attribute | Attribute Value |
|---|---|
| GaN Systems | |
| Product Category | MOSFET |
| GaN-on-Si | |
| SMD/SMT | |
| GaNpx | |
| N-Channel | |
| 1 Channel | |
| 650 V | |
| 30 A | |
| 63 mOhms | |
| – 10 V, + 7 V | |
| 1.1 V | |
| 6.1 nC | |
| – 55 C | |
| + 150 C | |
| Enhancement | |
| GaNPX | |
| GS665xx | |
| QFN | |
| Brand | GaN Systems |
| Configuration | Single |
| Fall Time | 5.2 ns |
| Moisture Sensitive | Yes |
| Product Type | MOSFET |
| Rise Time | 3.7 ns |
| Subcategory | MOSFETs |
| Transistor Type | E-HEMT Power Transistor |
| Typical Turn-Off Delay Time | 8 ns |
| Typical Turn-On Delay Time | 4.1 ns |
Applications
- Power and motor drive designs
- Synchronous boost or buck conversion
- High-power applications in various industries
- Shipped from: Shenzhen warehouse
- Shipment way: DHL/Fedex/TNT/UPS/EMS
- Expected Shipping Date: 1 to 3 days
- Our Lead-Time: 5-7 days
- Payment Methods: Bank transfers, Visa & MasterCard, PayPal, Western Union
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