IRFZ44NPBF
Part Number: IRFZ44NPBF
Manufacturer/Brand: IR
Description: N-Channel MOSFET, 55V voltage rating, 49A maximum current, 94W Maximum power rating, TO220 package.
Product Category: MOSFETs, Single FETs
Package/Case: TO220
Stock Condition: 7,000, Can Ship in 48 Hours
Minimum: 1 Multiple: 1 Price For: Each
Quantity | Price |
---|---|
1+ | $1.38 |
10+ | $1.24 |
25+ | $0.965 |
100+ | $0.797 |
500+ | $0.628 |
About IRFZ44NPBF
The IRFZ44NPBF is a high-quality power MOSFET manufactured by International Rectifier. It is an N-channel MOSFET, which means it can handle a negative voltage applied to its gate terminal. With a maximum voltage rating of 55V and a continuous drain current of 49A, this MOSFET is capable of handling high power applications. The TO220 package ensures easy installation and heat dissipation.
The IRFZ44NPBF is designed for various power applications, ranging from 12V to 300V. Its impressive power handling capabilities of 94W (Tc) make it suitable for power amplifiers, motor drives, and voltage regulators. This MOSFET provides low on-resistance, allowing for efficient power transmission and minimal power dissipation. Its through-hole design ensures a secure connection to the printed circuit board.
Manufactured by International Rectifier, a renowned semiconductor company, the IRFZ44NPBF is a reliable and high-performance MOSFET. With its high voltage and current ratings, it is capable of handling demanding power applications while maintaining excellent thermal performance. Whether used in industrial or consumer electronics, this power MOSFET provides efficient power management and ensures the safe operation of the connected devices.
Features
- N-channel MOSFET: Capable of handling negative voltage applied to the gate terminal.
- High voltage rating: Maximum voltage of 55V.
- High current rating: Continuous drain current of 49A.
- Wide power application range: Suitable for power applications from 12V to 300V.
- Power handling capabilities: Can handle up to 94W (Tc) power.
- Low on-resistance: Enables efficient power transmission and minimal power dissipation.
- Secure connection: Through-hole design ensures a secure connection to the printed circuit board.
- Reliable and high-performance: Manufactured by International Rectifier, a renowned semiconductor company.
Specifications
Type
|
Description
|
---|---|
Category
|
MOSFETs
Single FETs
|
Mfr
|
International Rectifier
|
Series
|
HEXFET®
|
Package
|
Bulk
|
Product Status
|
Active
|
FET Type
|
N-Channel
|
Technology
|
MOSFET (Metal Oxide)
|
Drain to Source Voltage (Vdss)
|
55 V
|
Current – Continuous Drain (Id) @ 25°C
|
49A (Tc)
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
Rds On (Max)
|
17.5mOhm @ 25A, 10V
|
Vgs(th) (Max) @ Id
|
4V @ 250µA
|
Gate Charge (Qg) (Max) @ Vgs
|
63 nC @ 10 V
|
Vgs (Max)
|
±20V
|
Input Capacitance (Ciss) (Max)
|
1470 pF @ 25 V
|
Power Dissipation (Max)
|
94W
|
Operating Temperature
|
-55°C ~ 175°C (TJ)
|
Mounting Type
|
Through Hole
|
Package / Case
|
TO220
|
Applications
- Power amplifiers: The IRFZ44NPBF can be used in power amplifiers due to its high power handling capabilities and low on-resistance.
- Motor drives: Its ability to handle high voltage and current makes it suitable for motor drive applications.
- Voltage regulators: The MOSFET’s voltage rating and power handling capabilities make it appropriate for voltage regulator circuits.
- Industrial electronics: The IRFZ44NPBF can be used in industrial applications where high power and efficient power management are required.
- Consumer electronics: It is also suitable for consumer electronic devices that require reliable power management and safe operation.
Datasheet Download: IRFZ44NPBF Datasheet
ECAD Model: PCB Symbol and Footprint
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